This IGSSE project will demonstrate entirely new classes of highly integrated and electricallypumped nano-lasers on silicon. The monolithic integration of such devices onto silicon chips using CMOS compatible methodologies is urgently needed for future chip-to-chip and core-to-core optical interconnects. By positioning semiconductor nanowire lasers (NWLs) on silicon on insulator (SOI) substrates we will integrate nano-lasers with photonic elements, such as proximal waveguides for distribution of light on-chip. From the outset we will focus on GaInAs - AlInAs core-shell NWs andoptimize the device performance to exhibit room temperature lasing in the technologically important telecommunications band for compatibility with off-chip optical fiber channels. Fully three-dimensional multi-scale simulations will allow us to optimize the photonic and electronic propertiesof the devices and, by selectively doping the GaInAs NW core and the AlInAs shell, radial p-i-njunctions shall be generated allowing electrical injection into the active region of individual NWs. The large surface-to-volume ratio of NWLs and their inherently non-linear response will open up entirely new avenues of exploration in which they are used as ultrasensitive nanoscale photonicsensors. The project team brings together students, postdocs and academics drawn from severalleading groups providing complementary expertise in materials microscopy multi-scale numericalsimulation, computational photonics, growth of advanced semiconductor materials, electricalengineering and device theory. Specifically, it will involve two research groups at TUM (Finley-WSI/PH and Lugli-EE), will integrate a TUM-IAS Hans Fischer electrical engineering group (Vuckovic-Stanford) and an external collaboration partner from TU Eindhoven (Koenraad-TU/e) to probe nanostructures with atomic resolution using scanning tunneling microscopy and spectroscopy.